IGF::OT::IGF THIS EFFORT, ENTITLED "EHD-BASED VARIABLE CONDUCTANCE THERMAL INTERFACE MATERIAL (VCTIM)", IS THE RESULT OF A PROPOSAL SUBMITTED BY BOEING SATELLITE SYSTEMS, INC. FOR AWARD UNDER THE NASA HEADQUARTERS OFFICE OF CHIEF TECHNOLOGIST BROAD AGENCY ANNOUNCEMENT (BAA) NNH11ZUA001K, ENTITLED "UNIQUE&INNOVATIVE SPACE TECHNOLOGY". THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION'S SPACE TECHNOLOGY GAME CHANGING TECHNOLOGY (GCT) DIVISION FOCUSES ON DEVELOPING RADICALLY NEW APPROACHES TO THE AGENCY'S FUTURE SPACE MISSIONS AND THE NATION'S SIGNIFICANT AEROSPACE NEEDS. SUCCESSFUL PRODUCTS OF GCT WILL PROVIDE OR LEAD TO REVOLUTIONARY ADVANCES IN CAPABILITY. THIS PROJECT IS FOCUSED ON NASA TECHNICAL AREA TA14 THERMAL MANAGEMENT SYSTEMS. UNDER THIS EFFORT, BOEING WILL DEVELOP A NEW CLASS OF ADAPTIVE NANOTHERMAL INTERFACE MATERIAL UTILIZING FIELD-DRIVEN ELECTROHYDRODYNAMIC (EHD) NANOFLUIDS, WHOSE THERMAL RESISTANCE CAN BE VARIED ON DEMAND RESULTING IN THE VARIABLE CONDUCTANCE THERMAL INTERFACE MATERIAL (VCTIM). BOEING'S INNOVATIVE DESIGN RELIES ON AN EHD-DRIVEN HIGH HEAT CAPACITY NANOPARTICLE FLUID THAT ACTIVELY AND RAPIDLY TRANSFERS HEAT FROM SOURCE-TO-SINK. THE RESULTS OF THIS EFFORT WILL DEMONSTRATE THE HIGH AND LOW END THERMAL RESISTANCES OF VCTIM WITH FOUR NANOFLUIDS THAT INCLUDE ALUMINUM NITRIDE (ALN), CUBIC BORON NITRIDE (CBN), BARIUM STRONTIUM TITANATE (BST), AND DODECANOIC ACID. THE GOAL IS TO TEST SAMPLES THAT COVER THE REALM OF PARAMETERS FROM SMALLER AND LOW DENSITY FAST MOVING PARTICLES TO LARGER AND HIGH DENSITY SLOWLY MOVING PARTICLES. UNDER THIS EFFORT, THE CONTRACTOR WILL DEVELOP VCTIM WITH AN EHD-DRIVEN HEAT TRANSFER FLUID AND A DEVICE MOUNT, DESIGNED TO PROVIDE THERMAL RESISTANCE OF<0.10 CM2-K/W WHEN A HIGH VOLTAGE POTENTIAL IS APPLIED, WITH A 100X REDUCTION IN THERMAL PERFORMANCE WHEN THE VOLTAGE IS REMOVED; USE FOUR SEPARATE NANOFLUIDS TO DEVELOP A NEW ADAPTIVE INTERFACE MATERIAL WHOSE THERMAL RESISTANCE CAN BE VARIED USING VCTIM; AND COMPLETE A RESEARCH AND DEVELOPMENT PROGRAM DESIGNED TO DEMONSTRATE A TECHNOLOGY READINESS LEVEL 3 IN SIX MONTHS.