Silicon and Silicon/Germanium Epitaxial Wafers

The National Institute of Standards and Technology is seeking the procurement of silicon and silicon/germanium epitaxial wafers under solicitation number 1333ND26QNB030152. This requirement is classified under NAICS 334413 for Semiconductor and Related Device Manufacturing and PSC 3670 for SPECIALIZED SEMICONDUCTOR, MICROCIRCUIT, AND PRINTED CIRCUIT BOARD MANUFACTURING MACHINERY. The acquisition is designated as an SBA; SBA set-aside, with responses due by May 12, 2026. Erik Frycklund serves as the point of contact for this notice, which was first published on April 27, 2026, and updated on May 6, 2026.

The scope of this solicitation covers wafers with a 100 mm substrate diameter for specified line items. While the government does not mandate a specific growth method such as Chemical Vapor Deposition or Molecular Beam Epitaxy, all products must meet requirements for thickness, composition, and coherency. For silicon/germanium films, the government has established a composition tolerance of 5 atomic percent. Recent amendments to the solicitation provide responses to industry questions regarding production methods and minimum specifications.

Documentation for this opportunity includes two attachments: the primary solicitation file 1333ND26QNB030152.pdf, posted on April 27, 2026, and a supplemental response document, response 2.pdf, posted on May 6, 2026. Vendors may utilize different growth methods for different film stacks, such as Molecular Beam Epitaxy for thin stacks and Chemical Vapor Deposition for thick films, provided the final wafers adhere to all nominal requirements.