Infrared detectors, especially for the short wave infrared spectral range are fabricated by growing semiconductor alloy thin films having different compositions on high quality substrates. The substrate needs to be of high electronic quality, i.e., it must be of high compositional uniformity, possess very few defects, and ideally be lattice matched with the thin films. Moreover, the optical quality of the substrate needs to be high, i.e., they must transmit light at the desired wavelength range with as little absorption or scattering as possible. Ternary alloy semiconductors, due to their flexible optical transmission ranges, are ideal for infrared detector applications. However, there are no commercial suppliers for bulk ternary alloy InAsP and it is important for the Air Force to have a domestic supply source for such a material.
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