RECENTLY, RESONANT-TUNNELING-DIODE (RTD) BASED CIRCUITS EMPLOYING MONOLITHICALLY-INTEGRATED RTD ON HIGH ELECTRON MOBILITY (HEMT) STRUCTURES HAVE BEEN DEVELOPED IN A NUMBER OF III-V SYSTEMS IN ORDER TO IMPROVE OPERATIONAL SPEED. THE MAIN GOAL OF THIS PROGRAM IS TO DEVELOP WIDE TEMPERATURE-OPERABLE RADIATION HARD MONOLITHICALLY-INTEGRATED ELECTRONICS BASED ON WIDE BANDGAP III-NITRIDE EPITAXIAL STRUCTURES. IN THE PHASE I PROGRAM, WE PROPOSE TO DEVELOP SAME-WAFER DISCRETE DEVICES (CAPACITORS, HEMTS, AND RTDS) BY EMPLOYING A NOVEL MULTI-LAYER ALN/GAN HETEROSTRUCTURE DESIGN, AND TO DEMONSTRATE THE RADIATION HARDNESS OF THESE DEVICES.