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Federal Contract Awards

132awards

Analyze awards, watch incumbents and competitors, track new transactions or changes, and use award history to shape recompete and capture strategy.

Awardee
is
MLVQMLJLC139
Award ID
Description
Recipient
Total Value
Awarding Agency
Funding Agency
Set Aside
NAICS
PSC
Award Date
Start Date
End Date
1333ND25PNB680327
OU68-25-NEW-249 ALUMINUM EFFUSION CELLSVT ASSOCIATES INC$16,250NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGYNATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY—333242Semiconductor Machinery Manufacturing6640LABORATORY EQUIPMENT AND SUPPLIESAug 8, 2025Aug 8, 2025Nov 13, 2025
W911QX24P0170
ARL REQUIRES ONE (1) MOLECULAR BEAM EPITAXY (MBE) COMPATIBLE ION BEAM SOURCE REQUIRED FOR GROWTH OF CUBIC BORON NITRIDE.SVT ASSOCIATES INC$51,300DEPT OF THE ARMYDEPT OF THE ARMY—333242Semiconductor Machinery Manufacturing6640LABORATORY EQUIPMENT AND SUPPLIESJul 31, 2024Jul 31, 2024Nov 20, 2024
1333ND23PNB640039
HIGH TEMPERATURE EFFUSION CELLSVT ASSOCIATES INC$15,750NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGYDEPT OF THE AIR FORCE—334516Analytical Laboratory Instrument Manufacturing6640LABORATORY EQUIPMENT AND SUPPLIESDec 23, 2022Dec 23, 2022Feb 22, 2023
N0018919PZ198
DUAL FILAMENT EFFUSION CELLSVT ASSOCIATES INC$18,650DEPT OF THE NAVYDEPT OF THE NAVY—5112106110ELECTRICAL CONTROL EQUIPMENTSep 18, 2019Sep 17, 2019Sep 30, 2019
N0017319P1484
MOLECULAR BEAM EPITAY SYSTEMS PR# 63-9080-19SVT ASSOCIATES INC$83,950DEPT OF THE NAVYDEPT OF THE NAVY—333242Semiconductor Machinery Manufacturing5961SEMICONDUCTOR DEVICES AND ASSOCIATED HARDWARESep 16, 2019Sep 16, 2019Nov 22, 2019
N0018919PZ086
MODEL SVTA-DFLT-100SVT ASSOCIATES INC$37,850DEPT OF THE NAVYDEPT OF THE NAVY—333242Semiconductor Machinery Manufacturing3670SPECIALIZED SEMICONDUCTOR, MICROCIRCUIT, AND PRINTED CIRCUIT BOARD MANUFACTURING MACHINERYFeb 14, 2019Feb 14, 2019Apr 25, 2019
1333ND18PNB680673
EFFUSION CELLSVT ASSOCIATES INC$20,950NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGYDEPT OF THE AIR FORCE—333242Semiconductor Machinery Manufacturing6640LABORATORY EQUIPMENT AND SUPPLIESSep 21, 2018Sep 21, 2018Dec 7, 2018
DOCSB134118SU0058
DUAL FILAMENT EFFUSIVE CELLSVT ASSOCIATES INC$22,070NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGYNATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY—334513Instruments and Related Products Manufacturing for Measuring, Displaying, and Controlling Industrial Process Variables6640LABORATORY EQUIPMENT AND SUPPLIESDec 20, 2017Dec 20, 2017Apr 27, 2018
N0018918PZ058
IGF::OT::IGF DUAL FILAMENT EFFUSION CELLSVT ASSOCIATES INC$18,500DEPT OF THE NAVYDEPT OF THE NAVY—333242Semiconductor Machinery Manufacturing6640LABORATORY EQUIPMENT AND SUPPLIESDec 19, 2017Dec 15, 2017Apr 10, 2018
DOCSB134117SU0243
RF PLASMA SOURCE FOR VEECO GEN10 MBE SYSTEMSVT ASSOCIATES INC$26,150NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGYNATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY—325120Industrial Gas Manufacturing6810CHEMICALSApr 24, 2017Apr 24, 2017Jun 30, 2017
N0018916PZ383
DUAL FILAMENT EFFUSION CELLSVT ASSOCIATES INC$18,950DEPT OF THE NAVYDEPT OF THE NAVY—334413Semiconductor and Related Device Manufacturing6850MISCELLANEOUS CHEMICAL SPECIALTIESApr 27, 2016Apr 27, 2016Jul 6, 2016
DOCSB134115SU0977
THE PURPOSE OF THIS REQUIREMENT IS FOR A EFFUSION CELL SYSTEM WITH DUAL FILAMENT HEATING ELEMENTS TO BE USED IN THE CALCIUM RAMSEY-BORDE CALCIUM ATOM INTERFEROMETER RESEARCH AT NIST-BOULDER.SVT ASSOCIATES INC$32,700NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGYDEFENSE ADVANCED RESEARCH PROJECTS AGENCY (DARPA)—334513Instruments and Related Products Manufacturing for Measuring, Displaying, and Controlling Industrial Process Variables6640LABORATORY EQUIPMENT AND SUPPLIESSep 21, 2015Sep 21, 2015Dec 1, 2015
DOCSB134115SU0971
THIS ALUMINUM EFFUSION CELL AND CONICAL CRUCIBLE IS A REPLACEMENT FOR THE NIST OWNED VEECO GEN 10 MOLECULAR BEAM EPITAXY SYSTEM.SVT ASSOCIATES INC$11,600NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGYNATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY—333242Semiconductor Machinery Manufacturing6640LABORATORY EQUIPMENT AND SUPPLIESSep 16, 2015Sep 16, 2015Nov 17, 2015
NNG15LK52P
LOW TEMPERATURE EFFUSION CELL, 22CC CRUCIBLES: A1203 AND PBN, POWER SUPPLY AND CONTROL PACKAGE. QTY., 1 EACH. SHIPPING AND HANDLING.SVT ASSOCIATES INC$11,300NATIONAL AERONAUTICS AND SPACE ADMINISTRATIONNATIONAL AERONAUTICS AND SPACE ADMINISTRATION—5417125210MEASURING TOOLS, CRAFTSMEN'SApr 24, 2015Apr 24, 2015Jun 25, 2015
N0018915PZ339
MODEL SVTA-DFLT-100SVT ASSOCIATES INC$18,000DEPT OF THE NAVYDEPT OF THE NAVY—424690Other Chemical and Allied Products Merchant Wholesalers6850MISCELLANEOUS CHEMICAL SPECIALTIESApr 23, 2015Apr 23, 2015Jul 2, 2015
NNG14PN54P
MODULATION P-DOPED GAN PHOTCATHODE, QTY., 2 EACH. SHIPPING.SVT ASSOCIATES INC$7,660NATIONAL AERONAUTICS AND SPACE ADMINISTRATIONNATIONAL AERONAUTICS AND SPACE ADMINISTRATION—5417126640LABORATORY EQUIPMENT AND SUPPLIESSep 11, 2014Sep 11, 2014Nov 14, 2014
N0002414P4536
IGF::OT::IGF STATUS REPORTSVT ASSOCIATES INC$149,666DEPT OF THE NAVYDEPT OF THE NAVY—541712AC32NATIONAL DEFENSE R&D SERVICES; DEFENSE-RELATED ACTIVITIES; APPLIED RESEARCHJun 25, 2014Jun 25, 2014Jan 2, 2015
N0017314P1212
IGF::OT::IGF EFFUSION CELLSVT ASSOCIATES INC$13,450DEPT OF THE NAVYDEPT OF THE NAVY—541712AJ52Apr 25, 2014Apr 25, 2014Jun 9, 2014
NNX13CP18P
IGF::OT::IGF SVT ASSOCIATES PROPOSES AN NOVEL TYPE II SUPERLATTICE STRUCTURE TO EXTEND THE CUTOFF WAVELENGTH AND CBIRD SL PHOTO DIODE STRUCTURE WITH UNIPOLAR BARRIERS TO SUPPRESS DARK CURRENT OF SL DETECTORS GROWN ON GASB SUBSTRATE. THIS INAS/GASB SUPERLATTICE MATERIAL SYSTEM IS CAPABLE OF INFRARED DETECTION IN MWIR/LWIR SPECTRAL RANGE, DEPENDING ON LAYER THICKNESS OF EACH SUPERLATTICE PERIOD. THE GOAL OF THIS PROGRAM IS TO DEVELOP HIGH PERFORMANCE TYPE II SL BASED FPA FOR 5-14 UM DETECTION. PHOTODETECTOR ARRAYS USING THIS MATERIAL ARE OF GREAT INTEREST TO THE NASA FOR VARIOUS APPLICATIONS INCLUDING, IN PARTICULAR, IMAGING AND OPTICAL DETECTION, AND OBJECT DISCRIMINATION WHEN TRACKING TARGETS IN SPACE OR PERFORMING ASTRONOMICAL OBSERVATIONS. THESE LWIR PHOTO DETECTORS CAN ALSO FIND APPLICATION TO INFRARED-BASED CHEMICAL IDENTIFICATION SYSTEMS AND TERRESTRIAL MAPPING. APPLYING THE DARK CURRENT SUPPRESSION AND CUTOFF WAVELENGTH EXTENSION PROCESS TO THE TYPE-II SUPERLATTICE DETECTORS SHOULD RESULT IN HIGHER OPERATING TEMPERATURE, EXTENDED CUTOFF WAVELENGTH, AND IMPROVED QUANTUM EFFICIENCY, ALL IMPORTANT FACTORS THAT SHOULD SIGNIFICANTLY ENHANCE FPA OPERATION. WE INTEND TO CHARACTERIZE THE POSITIVE EFFECTS OF PROPOSED TECHNIQUES IN PHASE I. IN PHASE II WE WILL REFINE THE TECHNIQUES TO REALIZE PASSIVE-COOLED HIGH-PERFORMANCE LWIR FPAS WITH QUANTUM EFFICIENCY LARGER THAN 60%.SVT ASSOCIATES INC$124,884NATIONAL AERONAUTICS AND SPACE ADMINISTRATIONNATIONAL AERONAUTICS AND SPACE ADMINISTRATION—541712AR11SPACE R&D SERVICES; SPACE FLIGHT, RESEARCH AND SUPPORTING ACTIVITIES; BASIC RESEARCHMay 7, 2013May 23, 2013Nov 23, 2013
FA860113P0114
ATOMIC FLUX MONITORSVT ASSOCIATES INC$84,340DEPT OF THE AIR FORCEDEPT OF THE AIR FORCE—334516Analytical Laboratory Instrument Manufacturing6640LABORATORY EQUIPMENT AND SUPPLIESFeb 20, 2013Feb 22, 2013Feb 22, 2013
NNX12CE52P
SVT ASSOCIATES PROPOSES AN NOVEL TYPE II SUPERLATTICE STRUCTURE TO EXTEND THE CUTOFF WAVELENGTH AND CBIRD SL PHOTO DIODE STRUCTURE WITH UNIPOLAR BARRIERS TO SUPPRESS DARK CURRENT OF SL DETECTORS GROWN ON GASB SUBSTRATE. THIS INAS/GASB SUPERLATTICE MATERIAL SYSTEM IS CAPABLE OF INFRARED DETECTION IN MWIR/LWIR SPECTRAL RANGE, DEPENDING ON LAYER THICKNESS OF EACH SUPERLATTICE PERIOD. THE GOAL OF THIS PROGRAM IS TO DEVELOP HIGH PERFORMANCE TYPE II SL BASED FPA FOR 6-14 UM DETECTION. PHOTO DETECTOR ARRAYS USING THIS MATERIAL ARE OF GREAT INTEREST TO THE NASA FOR VARIOUS APPLICATIONS INCLUDING, IN PARTICULAR, IMAGING AND OPTICAL DETECTION, AND OBJECT DISCRIMINATION WHEN TRACKING TARGETS IN SPACE OR PERFORMING ASTRONOMICAL OBSERVATIONS. THESE LWIR PHOTO DETECTORS CAN ALSO FIND APPLICATION TO INFRARED-BASED CHEMICAL IDENTIFICATION SYSTEMS AND TERRESTRIAL MAPPING. APPLYING THE DARK CURRENT SUPPRESSION AND CUTOFF WAVELENGTH EXTENSION PROCESS TO THE TYPE II SUPERLATTICE DETECTORS SHOULD RESULT IN HIGHER OPERATING TEMPERATURE, EXTENDED CUTOFF WAVELENGTH, AND IMPROVED QUANTUM EFFICIENCY, ALL IMPORTANT FACTORS THAT SHOULD SIGNIFICANTLY ENHANCE FPA OPERATION. WE INTEND TO CHARACTERIZE THE POSITIVE EFFECTS OF PROPOSED TECHNIQUES IN PHASE I. IN PHASE II WE WILL REFINE THE TECHNIQUES TO REALIZE PASSIVE-COOLED HIGH-PERFORMANCE LWIR FPAS WITH QUANTUM EFFICIENCY LARGER THAN 50%.SVT ASSOCIATES INC$124,859NATIONAL AERONAUTICS AND SPACE ADMINISTRATIONNATIONAL AERONAUTICS AND SPACE ADMINISTRATION—541712AR11SPACE R&D SERVICES; SPACE FLIGHT, RESEARCH AND SUPPORTING ACTIVITIES; BASIC RESEARCHFeb 13, 2012Feb 13, 2012Aug 13, 2012
NNX12CE68P
RECENTLY, RESONANT-TUNNELING-DIODE (RTD) BASED CIRCUITS EMPLOYING MONOLITHICALLY-INTEGRATED RTD ON HIGH ELECTRON MOBILITY (HEMT) STRUCTURES HAVE BEEN DEVELOPED IN A NUMBER OF III-V SYSTEMS IN ORDER TO IMPROVE OPERATIONAL SPEED. THE MAIN GOAL OF THIS PROGRAM IS TO DEVELOP WIDE TEMPERATURE-OPERABLE RADIATION HARD MONOLITHICALLY-INTEGRATED ELECTRONICS BASED ON WIDE BANDGAP III-NITRIDE EPITAXIAL STRUCTURES. IN THE PHASE I PROGRAM, WE PROPOSE TO DEVELOP SAME-WAFER DISCRETE DEVICES (CAPACITORS, HEMTS, AND RTDS) BY EMPLOYING A NOVEL MULTI-LAYER ALN/GAN HETEROSTRUCTURE DESIGN, AND TO DEMONSTRATE THE RADIATION HARDNESS OF THESE DEVICES.SVT ASSOCIATES INC$96,891NATIONAL AERONAUTICS AND SPACE ADMINISTRATIONNATIONAL AERONAUTICS AND SPACE ADMINISTRATION—541712AR11SPACE R&D SERVICES; SPACE FLIGHT, RESEARCH AND SUPPORTING ACTIVITIES; BASIC RESEARCHFeb 13, 2012Feb 13, 2012Aug 13, 2012
N0017311P1410
STAGE/MANIPULATORSVT ASSOCIATES INC$43,920DEPT OF THE NAVYDEPT OF THE NAVY—334516Analytical Laboratory Instrument Manufacturing6640LABORATORY EQUIPMENT AND SUPPLIESAug 3, 2011Aug 3, 2011Sep 2, 2011
FA282311P8049
HIGH TEMP EFFUSION CELL MODEL:SVT ASSOCIATES INC$35,000DEPT OF THE AIR FORCEDEPT OF THE AIR FORCE—334516Analytical Laboratory Instrument Manufacturing6640LABORATORY EQUIPMENT AND SUPPLIESJul 11, 2011Jul 8, 2011Sep 16, 2011
NNX11CE80P
THIS PROPOSAL IS DIRECTED TOWARD THE DEVELOPMENT OF INNOVATIVE HIGH-EFFICIENCY UV PHOTOCATHODES BASED ON THE WIDE BANDGAP III-NITRIDE SEMICONDUCTORS FOR RELIABLE OPERATION AT HIGH TEMPERATURE AND HIGH RADIATION ENVIRONMENTS FOR FUTURE NASA MISSIONS NEAR THE SUN AND IN DEEP ATMOSPHERES OF VENUS AND JUPITER. THE PROPOSED WORK INCLUDES THE INCORPORATION OF THESE PHOTOCATHODES ON AL2O3-BASED HIGH-TEMPERATURE MICRO-CHANNEL PLATES (MCPS) FOR HIGH-SENSITIVITY UV PHOTON COUNTING AND IMAGINGSVT ASSOCIATES INC$99,948NATIONAL AERONAUTICS AND SPACE ADMINISTRATIONNATIONAL AERONAUTICS AND SPACE ADMINISTRATION—541712AR11SPACE R&D SERVICES; SPACE FLIGHT, RESEARCH AND SUPPORTING ACTIVITIES; BASIC RESEARCHFeb 18, 2011Feb 18, 2011Sep 29, 2011
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