IGF::OT::IGF CAPITALIZING ON A POTENT CONFLUENCE OF EXPERTISE IN III-NITRIDE EPITAXY, GAN-SI POWER DEVICE DESIGNS, AND WIDE-BANDGAP POWER ELECTRONICS, RESEARCHERS AT GENESIC SEMICONDUCTOR AND CORNELL UNIVERSITY JOINTLY PROPOSE A SBIR PROGRAM FOCUSED ON THE DEVELOPMENT OF 15 KW/300 C-RATED POWER CONVERTERS USING ALGAN/GAN-SI MOS-HFETS AND SCHOTTKY RECTIFIERS. THE PROPOSED ALGAN/GAN-SI POWER CONVERTERS TO BE DEVELOPED IN THIS PROGRAM WILL USHER IN A NEW GENERATION OF HIGH-EFFICIENCY, LOW-COST, AND RADIATION-HARD POWER CONVERSION UNITS ON-BOARD FUTURE NASA SPACECRAFT. PHASE I OF THIS PROPOSED WORK WILL FOCUS ON THE OPTIMIZATION OF THE DESIGN AND FABRICATION OF THE ALGAN/GAN-SI MOS-HFET AND NSJ SBR DEVICES. PHASE II WILL BE FOCUSED ON THE DESIGN AND INTEGRATION OF SI/GAN GATE-DRIVE CIRCUITRY WITH THE POWER SBRS AND TRANSISTORS TO CREATE HIGH-POWER INTEGRATED CIRCUITS. ANOTHER MAJOR OBJECTIVE DURING PHASE II WILL BE THE CONSTRUCTION OF RAD-HARD PACKAGING FOR THE POWER ICS. AT THE END OF PHASE II OF THIS PROGRAM, A FULLY-FUNCTIONAL 15 KW/300 C RATED POWER CONVERTER IC EQUIPPED WITH ALGAN/GAN-ON-SI MOS-HFETS, NATURAL SUPERJUNCTION (NSJ) SBRS AS FREE-WHEELING DIODES AND ON-CHIP SIC OR III-NITRIDE GATE DRIVE CIRCUITRY WILL BE DEMONSTRATED AT A SWITCHING FREQUENCY OF 1 MHZ AND AT A TEMPERATURE OF 300 C. AS COMPARED TO THE EXISTING STATE-OF-THE-ART POWER ELECTRONICS TECHNOLOGY, THE PROPOSED ALGAN/GAN-ON-SI POWER CONVERTERS WILL OFFER (A) LOWER ON-STATE LOSSES, 300 C OPERATION AND 1 MHZ SWITCHING CAPABILITY (B) A LATERAL DEVICE ARCHITECTURE, WHICH IS HIGHLY DESIRABLE FOR CONSTRUCTION FOR MONOLITHIC POWER INTEGRATED CIRCUITS (C) POSSIBILITY OF HYBRID INTERCONNECTION OF III-NITRIDE POWER DEVICES WITH ON-CHIP RAD-HARD ALGAN/GAN GATE DRIVE CIRCUITRY (D) DESIRABLE NORMALLY-OFF POWER SWITCHES.