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Award ID | Description | Recipient | Total Value | Awarding Agency | Funding Agency | Set Aside | NAICS | PSC | Award Date | Start Date | End Date | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SBIR PHASE I RESEARCH STUDY | GENESIC SEMICONDUCTOR INC. | $167,497 | DEFENSE MICROELECTRONICS ACTIVITY (DMEA) | DEFENSE MICROELECTRONICS ACTIVITY (DMEA) | — | 541713Research and Development in Nanotechnology | AC11NATIONAL DEFENSE R&D SERVICES; DEPARTMENT OF DEFENSE - MILITARY; BASIC RESEARCH | Jul 29, 2021 | Aug 2, 2021 | Feb 10, 2022 | ||
| RESEARCH AND DEVELOPMENT | GENESIC SEMICONDUCTOR INC. | $2,000,000 | DEFENSE CONTRACT MANAGEMENT AGENCY (DCMA) | DEPT OF THE NAVY | — | 541715Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology) | AD92 | Oct 8, 2020 | Oct 8, 2020 | Nov 14, 2024 | ||
| PERFORMANCE, YEILD, AND COST IMPROVEMENT FOR HIGH VOLUME | GENESIC SEMICONDUCTOR INC. | $4,650,000 | DEFENSE CONTRACT MANAGEMENT AGENCY (DCMA) | DEPT OF THE AIR FORCE | — | 541715Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology) | AC13NATIONAL DEFENSE R&D SERVICES; DEPARTMENT OF DEFENSE - MILITARY; EXPERIMENTAL DEVELOPMENT | Feb 20, 2020 | Feb 20, 2020 | Apr 29, 2023 | ||
| PROGRESS REPORT | GENESIC SEMICONDUCTOR INC. | $229,998 | DEPT OF THE NAVY | DEPT OF THE NAVY | — | 541715Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology) | AD91 | Sep 28, 2018 | Oct 15, 2018 | Dec 30, 2019 | ||
| SBIR PHASE ** FOR TOPIC: A16-066 | GENESIC SEMICONDUCTOR INC. | $830,000 | DEFENSE CONTRACT MANAGEMENT AGENCY (DCMA) | DEPT OF THE ARMY | — | 541715Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology) | AC12NATIONAL DEFENSE R&D SERVICES; DEPARTMENT OF DEFENSE - MILITARY; APPLIED RESEARCH | Nov 6, 2017 | Nov 29, 2017 | Mar 31, 2026 | ||
| IGF::OT::IGF RESEARCH AND DEVELOPMENT | GENESIC SEMICONDUCTOR INC. | $1,999,935 | DEFENSE CONTRACT MANAGEMENT AGENCY (DCMA) | DEPT OF THE NAVY | — | 541712 | AD92 | Sep 11, 2017 | Sep 11, 2017 | Dec 31, 2021 | ||
| IGF::OT::IGF THIS TWO-PHASE SBIR PROGRAM TARGETS THE NEED FOR HIGHLY INTEGRATED SIC-BASED ELECTRONICS SYSTEMS BY DEVELOPING GATE DRIVE CIRCUITRY THAT CAN BE FULLY INTEGRATED WITH 4H-SIC POWER SWITCHING DEVICES, ENABLING EVENTUAL REALIZATION OF A MONOLITHIC POWER SWITCHING PLATFORM. SPECIFICALLY, THE FINAL GOAL OF THIS PROGRAM IS TO DEVELOP AND DEMONSTRATE A FULLY INTEGRATED, ISOLATED GATE DRIVER ARCHITECTURE, HAVING AN INTEGRATED SIC POWER MOSFET. IN ADDITION TO INTEGRATED RESISTORS AND CAPACITORS, DEVELOPMENT OF SIC CMOS TECHNOLOGY WILL ENTAIL THE DEMONSTRATION OF LATERAL SIC NMOSFETS AND THE MORE CHALLENGING SIC PMOSFET DEVICES WITH ADEQUATE PERFORMANCE AND RADIATION HARDNESS. DURING PHASE I, AN NMOS-ONLY GATE DRIVE BUFFER CIRCUIT WAS DESIGNED AND IMPLEMENTED ON THE SAME HOST SUBSTRATE USED FOR FABRICATING 1200 V SIC DMOSFETS. PHASE II WILL FOCUS ON INTEGRATING THE GATE DRIVE BUFFER IC FABRICATED DURING PHASE I WITH A 1200 V RATED POWER SIC DMOSFET. PROCESS AND DEVICE DEVELOPMENT OF A SIC PMOS TECHNOLOGY WILL BE CONDUCTED DURING PHASE II, IN PURSUIT OF A SIC CMOS GATE DRIVE CIRCUIT. THE FABRICATED POWER AND LATERAL SIC DEVICES WILL BE SUBJECTED TO EXTENSIVE RADIATION TESTING TO INVESTIGATE THE DEGRADATION PATHWAYS OF THIS MONOLITHIC POWER SWITCHING DEVICE, WHEN EXPOSED TO HIGH RADIATION ENVIRONMENTS. | GENESIC SEMICONDUCTOR INC. | $755,000 | NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | — | 541712 | AR11SPACE R&D SERVICES; SPACE FLIGHT, RESEARCH AND SUPPORTING ACTIVITIES; BASIC RESEARCH | Jun 5, 2017 | Jun 5, 2017 | Dec 31, 2019 | ||
| IGF::OT::IGF SOLID STATE HIGH VOLTAGE SWITCHING DEVICE FOR MULTI-POINT INITIATION SBIR PHASE I. | GENESIC SEMICONDUCTOR INC. | $150,000 | DEPT OF THE ARMY | DEPT OF THE ARMY | — | 541712 | AD92 | Aug 29, 2016 | Aug 29, 2016 | Dec 1, 2017 | ||
| IGF::CT::IGF ROBUST SIC MOSFET BASED POWER MODULES (N161-066-0489) | GENESIC SEMICONDUCTOR INC. | $150,000 | DEPT OF THE NAVY | DEPT OF THE NAVY | — | 541712 | AD92 | Jul 8, 2016 | Jul 8, 2016 | Nov 10, 2017 | ||
| IGF::OT::IGF THIS TWO-PHASE SBIR PROGRAM TARGETS THE NEED FOR HIGHLY INTEGRATED SIC-BASED ELECTRONICS SYSTEMS BY DEVELOPING ANALOG AND DIGITAL CIRCUITS THAT CAN BE FULLY INTEGRATED WITH 4H-SIC POWER SWITCHING DEVICES, ENABLING EVENTUAL REALIZATION OF A MONOLITHIC, HIGHLY INTEGRATED GATE DRIVER CIRCUIT. SPECIFICALLY, THE FINAL GOAL OF THIS PROGRAM IS TO DEVELOP AND DEMONSTRATE A FULLY INTEGRATED, ISOLATED, HIGH-SIDE/LOW-SIDE GATE DRIVER ARCHITECTURE, HAVING AN INTEGRATED SIC POWER MOSFET. IN ADDITION TO INTEGRATED RESISTORS AND CAPACITORS, DEVELOPMENT OF SIC CMOS TECHNOLOGY WILL ENTAIL THE DEMONSTRATION OF LATERAL SIC NMOSFETS AND THE MORE CHALLENGING SIC PMOSFET DEVICES WITH ADEQUATE PERFORMANCE AND RADIATION HARDNESS. DURING PHASE I, THE DEVELOPMENT OF A RAD-HARD SIC PMOS PROCESS WILL BE INVESTIGATED. IN PARALLEL, CAPITALIZING ON GENESIC?S ALREADY DEVELOPED SIC NMOS PROCESS, AN NMOS-ONLY GATE DRIVE BUFFER CIRCUIT WILL BE DESIGNED AND IMPLEMENTED ON THE SAME HOST SUBSTRATE AS 1200 V SIC DMOSFETS. COMPACT DEVICE MODELS WILL BE GENERATED DURING PHASE II FROM THE RESULTS OF THE SIC NMOS/PMOS PROCESS DEVELOPMENT. PENDING SUCCESSFUL DEVELOPMENT OF A RAD-HARD SIC PMOS PROCESS DURING PHASE I, PHASE II WILL FOCUS ON BUILDING AN ENTIRE SIC CMOS-BASED GATE DRIVE CIRCUIT AND INTEGRATING IT WITH A 1200 V SIC DMOSFET. | GENESIC SEMICONDUCTOR INC. | $125,000 | NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | — | 541712 | AR11SPACE R&D SERVICES; SPACE FLIGHT, RESEARCH AND SUPPORTING ACTIVITIES; BASIC RESEARCH | May 19, 2016 | Jun 10, 2016 | Jan 31, 2017 | ||
| IGF::OT::IGF THE PROPOSED SBIR PROGRAM TARGETS THE DEVELOPMENT OF RAD-HARD BY DESIGN (RHBD), 1200 V-CLASS SIC (PLANAR) VERTICAL DMOSFETS AND POWER SCHOTTKY RECTIFIERS FOR FUTURE NASA SPACE MISSIONS. SINGLE DIE RATINGS OF>1200 V,>75 A,>225?C AND COMPLIANCE TO A NASA-CERTIFIED RADIATION HARDNESS ASSURANCE PROGRAM ARE TARGETED FOR THE PROPOSED SIC POWER DEVICES. THE TARGET APPLICATION FOR THESE DEVICES INVOLVES A 30 KW POWER PROCESSOR UNIT (PPU) ON-BOARD A HALL THRUSTER PROPULSION SYSTEM OPERATING AT A 300-400 V (AVERAGE) DC BIAS WITH A PEAK VOLTAGE OF 600 V. SEVERAL INNOVATIVE DEVICE DESIGNS AND PROCESS STEPS FOR FABRICATING RHBD SIC POWER DMOSFETS AND SCHOTTKY RECTIFIERS WILL BE DEVELOPED DURING PHASE I. BUILDING ON THE DEVICE DEVELOPMENT CONDUCTED DURING PHASE I, THE DESIGN AND FABRICATION OF TRAVELED GUIDED 1200 V/75 A SIC DMOSFET AND SCHOTTKY RECTIFIER WAFER LOTS WILL BE CONDUCTED DURING THE PHASE II PROGRAM. THE EXISTING PACKAGING TECHNIQUES WILL BE MODIFIED FOR MEETING THE REQUIRED RADIATION STANDARDS FROM NASA. SELECTED DIE FROM BOTH PHASES OF THE PROPOSED PROGRAM WILL BE PACKAGED IN APPROPRIATE HEADERS FOR CONTROLLED DOSE RADIATION TESTING AS PER NASA REQUIREMENTS. A RIGOROUS SPACE-LEVEL (JANS) QUALIFICATION WILL BE CONDUCTED ON THE FABRICATED DEVICES DURING PHASE II. PHASE II WILL CULMINATE WITH THE INSERTION OF THE SIC POWER DMOSFETS AND SCHOTTKY RECTIFIERS INTO A 30 KW POWER PROCESSING UNIT (PPU) RELEVANT TO A NASA ELECTRIC PROPULSION SYSTEM AND DEMONSTRATING STABLE OPERATION. | GENESIC SEMICONDUCTOR INC. | $125,000 | NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | — | 541712 | AR11SPACE R&D SERVICES; SPACE FLIGHT, RESEARCH AND SUPPORTING ACTIVITIES; BASIC RESEARCH | May 22, 2015 | Jun 17, 2015 | Dec 17, 2015 | ||
| HIGH TEMPERATURE APPLICATIONS - SIC RECTIFIERS, SIC PIN RECTIFIERS, SIC JUNCTION TRANSISTORS | GENESIC SEMICONDUCTOR INC. | $11,069 | NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | — | 334413Semiconductor and Related Device Manufacturing | 6640LABORATORY EQUIPMENT AND SUPPLIES | Jul 29, 2014 | Jul 29, 2014 | Aug 12, 2014 | ||
| IGF::OT::IGF CAPITALIZING ON A STRONG EXPERTISE IN III-NITRIDE EPITAXY, GAN-SI POWER DEVICE DESIGNS, AND WIDEBANDGAP POWER ELECTRONICS, RESEARCHERS AT GENESIC SEMICONDUCTOR PROPOSE A SBIR PROGRAM FOCUSED ON THE DEVELOPMENT OF 15 KW/300C-RATED POWER CONVERTERS USING ALGAN/GAN-SI MOS-HFETS AND SCHOTTKY RECTIFIERS. THE PROPOSED ALGAN/GAN-SI POWER CONVERTERS TO BE DEVELOPED IN THIS PROGRAM WILL USHER IN A NEW GENERATION OF HIGH-EFFICIENCY, LOW-COST, AND RADIATION-HARD POWER CONVERSION UNITS ON-BOARD FUTURE NASA SPACECRAFT. PHASE I OF THIS PROPOSED WORK FOCUSSED ON THE OPTIMIZATION OF THE DESIGN AND FABRICATION OF THE ALGAN/GAN-SI MOS-HFET AND NSJ SBR DEVICES. PHASE II WILL BE FOCUSED ON THE DESIGN AND INTEGRATION OF SI/GAN GATE-DRIVE CIRCUITRY WITH THE POWER SBRS AND TRANSISTORS TO CREATE HIGH-POWER INTEGRATED CIRCUITS. ANOTHER MAJOR OBJECTIVE DURING PHASE II WILL BE THE CONSTRUCTION OF RAD-HARD PACKAGING FOR THE POWER ICS. AT THE END OF PHASE II OF THIS PROGRAM, A FULLYFUNCTIONAL 15 KW/300C RATED POWER CONVERTER IC EQUIPPED WITH ALGAN/GAN-ON-SI MOS-HFETS, NATURAL SUPERJUNCTION (NSJ) SBRS AS FREE-WHEELING DIODES AND ON-CHIP SIC OR III-NITRIDE GATE DRIVE CIRCUITRY WILL BE DEMONSTRATED AT A SWITCHING FREQUENCY OF 1 MHZ AND AT A TEMPERATURE OF 300C. AS COMPARED TO THE EXISTING STATE-OF-THE-ART POWER ELECTRONICS TECHNOLOGY, THE PROPOSED ALGAN/GAN-ON-SI POWER CONVERTERS WILL OFFER (A) LOWER ON-STATE LOSSES, 300C OPERATION AND 1 MHZ SWITCHING CAPABILITY (B) A LATERAL DEVICE ARCHITECTURE, WHICH IS HIGHLY DESIRABLE FOR CONSTRUCTION FOR MONOLITHIC POWER INTEGRATED CIRCUITS (C) POSSIBILITY OF HYBRID INTERCONNECTION OF III-NITRIDE POWER DEVICES WITH ON-CHIP RAD-HARD ALGAN/GAN GATE DRIVE CIRCUITRY (D) DESIRABLE NORMALLY-OFF POWER SWITCHES | GENESIC SEMICONDUCTOR INC. | $1,499,992 | NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | — | 541712 | AR11SPACE R&D SERVICES; SPACE FLIGHT, RESEARCH AND SUPPORTING ACTIVITIES; BASIC RESEARCH | Apr 15, 2014 | Apr 14, 2014 | Jul 15, 2016 | ||
| IGF::OT::IGF CAPITALIZING ON A POTENT CONFLUENCE OF EXPERTISE IN III-NITRIDE EPITAXY, GAN-SI POWER DEVICE DESIGNS, AND WIDE-BANDGAP POWER ELECTRONICS, RESEARCHERS AT GENESIC SEMICONDUCTOR AND CORNELL UNIVERSITY JOINTLY PROPOSE A SBIR PROGRAM FOCUSED ON THE DEVELOPMENT OF 15 KW/300 C-RATED POWER CONVERTERS USING ALGAN/GAN-SI MOS-HFETS AND SCHOTTKY RECTIFIERS. THE PROPOSED ALGAN/GAN-SI POWER CONVERTERS TO BE DEVELOPED IN THIS PROGRAM WILL USHER IN A NEW GENERATION OF HIGH-EFFICIENCY, LOW-COST, AND RADIATION-HARD POWER CONVERSION UNITS ON-BOARD FUTURE NASA SPACECRAFT. PHASE I OF THIS PROPOSED WORK WILL FOCUS ON THE OPTIMIZATION OF THE DESIGN AND FABRICATION OF THE ALGAN/GAN-SI MOS-HFET AND NSJ SBR DEVICES. PHASE II WILL BE FOCUSED ON THE DESIGN AND INTEGRATION OF SI/GAN GATE-DRIVE CIRCUITRY WITH THE POWER SBRS AND TRANSISTORS TO CREATE HIGH-POWER INTEGRATED CIRCUITS. ANOTHER MAJOR OBJECTIVE DURING PHASE II WILL BE THE CONSTRUCTION OF RAD-HARD PACKAGING FOR THE POWER ICS. AT THE END OF PHASE II OF THIS PROGRAM, A FULLY-FUNCTIONAL 15 KW/300 C RATED POWER CONVERTER IC EQUIPPED WITH ALGAN/GAN-ON-SI MOS-HFETS, NATURAL SUPERJUNCTION (NSJ) SBRS AS FREE-WHEELING DIODES AND ON-CHIP SIC OR III-NITRIDE GATE DRIVE CIRCUITRY WILL BE DEMONSTRATED AT A SWITCHING FREQUENCY OF 1 MHZ AND AT A TEMPERATURE OF 300 C. AS COMPARED TO THE EXISTING STATE-OF-THE-ART POWER ELECTRONICS TECHNOLOGY, THE PROPOSED ALGAN/GAN-ON-SI POWER CONVERTERS WILL OFFER (A) LOWER ON-STATE LOSSES, 300 C OPERATION AND 1 MHZ SWITCHING CAPABILITY (B) A LATERAL DEVICE ARCHITECTURE, WHICH IS HIGHLY DESIRABLE FOR CONSTRUCTION FOR MONOLITHIC POWER INTEGRATED CIRCUITS (C) POSSIBILITY OF HYBRID INTERCONNECTION OF III-NITRIDE POWER DEVICES WITH ON-CHIP RAD-HARD ALGAN/GAN GATE DRIVE CIRCUITRY (D) DESIRABLE NORMALLY-OFF POWER SWITCHES. | GENESIC SEMICONDUCTOR INC. | $0 | NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | — | 541712 | AR11SPACE R&D SERVICES; SPACE FLIGHT, RESEARCH AND SUPPORTING ACTIVITIES; BASIC RESEARCH | May 23, 2013 | May 23, 2013 | Nov 23, 2013 | ||
| MONOLITHIC INTEGRATED SIC SUPER JUNCTION TRANSISTOR-JBS DIODE (MIDSJT) DEVICES ARE USED TO CONSTRUCT 500 OC CAPABLE MOTOR CONTROL POWER MODULES FOR DIRECT INTEGRATION WITH THE EXPLORATION ROVERS REQUIRED TO OPERATE IN VENUS-LIKE ENVIRONMENTS. THE PHASE I OF THIS PROPOSED WORK WILL FOCUS ON THE INTEGRATED MIDSJT DEVICE DEVELOPMENT AND HIGH-TEMPERATURE PACKAGING. PHASE II WILL FOCUS ON THE INTEGRATION OF THE MIDSJT DEVICES TO CONSTRUCT FULL 3-PHASE INVERTER MOTOR CONTROL MODULES. ALTHOUGH SIC IS THE SEMICONDUCTOR MATERIAL OF CHOICE FOR FABRICATING HIGH-TEMPERATURE (>150 OC) POWER ELECTRONICS, EXISTING SIC MOSFET AND JFET BASED TRANSISTOR DEVICE TECHNOLOGIES PERFORM POORLY AT TEMPERATURES EXCEEDING 200 OC. THE PROPOSED GATE OXIDE-FREE INTEGRATED MIDSJT DEVICE TECHNOLOGY WILL OVERCOME SEVERAL PROBLEMS ASSOCIATED WITH EXISTING SIC DEVICE TECHNOLOGIES BY: (A) EXHIBITING DESIRABLE NORMALLY-OFF OPERATION YET BEST-IN-CLASS ON-STATE CHARACTERISTICS AT TEMPERATURES AS HIGH AS 500 OC, (B) ELIMINATING PARASITIC INDUCTANCES/CAPACITANCES ASSOCIATED WITH INTERCONNECTING DISCRETE DEVICES, AND (C) ELIMINATING HIGH-TEMPERATURE GATE OXIDE RELIABILITY ISSUES. SPECIAL DEVICE DESIGNS AND FABRICATION PROCESSES WILL BE INVESTIGATED IN THIS WORK FOR RELIABLE DEVICE OPERATION AT 500 OC. NOVEL POWER DEVICE PACKAGING TECHNIQUES IN THE AREAS OF POWER SUBSTRATE, DIE-ATTACH, CHIP METALLIZATION AND WIRE BONDS WILL BE EXPLORED TO DEMONSTRATE RELIABLE MODULE OPERATION AT 500 OC AFTER SEVERAL THERMAL CYCLES. | GENESIC SEMICONDUCTOR INC. | $100,000 | NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | — | 541712 | AR11SPACE R&D SERVICES; SPACE FLIGHT, RESEARCH AND SUPPORTING ACTIVITIES; BASIC RESEARCH | Feb 17, 2011 | Feb 18, 2011 | Sep 29, 2011 | ||
| RESEARCH AND DEVELOPMENT IN THE PHYSICAL, ENGINEERING, AND LIFE SCIENCES (EXCEPT BIOTECHNOLOGY) | GENESIC SEMICONDUCTOR INC. | $1,499,958 | DEFENSE CONTRACT MANAGEMENT AGENCY (DCMA) | DEPT OF THE NAVY | — | 541712 | AD96 | Feb 25, 2010 | Feb 25, 2010 | Feb 24, 2013 | ||
| PHASE II SBIR | GENESIC SEMICONDUCTOR INC. | $1,396,860 | DEFENSE CONTRACT MANAGEMENT AGENCY (DCMA) | DEPT OF THE ARMY | — | 541712 | AD92 | Sep 11, 2009 | Sep 11, 2009 | Jun 30, 2013 | ||
| SAPPHIRE WAFERS | GENESIC SEMICONDUCTOR INC. | $920 | NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY | NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY | — | 334419Other Electronic Component Manufacturing | 6650OPTICAL INSTRUMENTS, TEST EQUIPMENT, COMPONENTS AND ACCESSORIES | Sep 8, 2009 | Sep 8, 2009 | Oct 30, 2009 | ||
| SBIR PHASE I | GENESIC SEMICONDUCTOR INC. | $119,938 | DEPT OF THE ARMY | DEPT OF THE ARMY | — | 541330Engineering Services | AD92 | Oct 30, 2008 | Oct 31, 2008 | Nov 16, 2009 | ||
| SBIR | GENESIC SEMICONDUCTOR INC. | $749,991 | DEPT OF THE NAVY | DEPT OF THE NAVY | — | 541712 | AZ11 | Sep 26, 2008 | Sep 26, 2008 | Jul 25, 2011 | ||
| SBIR RESEARCH | GENESIC SEMICONDUCTOR INC. | $99,774 | DEPT OF THE NAVY | DEPT OF THE NAVY | — | 541712 | AJ11GENERAL SCIENCE AND TECHNOLOGY R&D SERVICES; GENERAL SCIENCE AND TECHNOLOGY; BASIC RESEARCH | Jul 14, 2008 | Jul 11, 2008 | Jan 10, 2009 | ||
| SBIR PHASE I AWARD | GENESIC SEMICONDUCTOR INC. | $90,000 | NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY | NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY | — | 541712 | AB93 | Jul 2, 2008 | Jul 15, 2008 | Feb 27, 2009 | ||
| MONTHLY PROGRESS REPORTS | GENESIC SEMICONDUCTOR INC. | $99,997 | DEFENSE THREAT REDUCTION AGENCY (DTRA) | DEFENSE THREAT REDUCTION AGENCY (DTRA) | — | 541710 | AC64 | May 31, 2007 | May 25, 2007 | Nov 29, 2007 | ||
| SBIR PHASE I | GENESIC SEMICONDUCTOR INC. | $99,987 | DEPT OF THE NAVY | DEPT OF THE NAVY | — | 541710 | AZ11 | Jul 28, 2006 | Jul 31, 2006 | Jan 21, 2007 |